In this paper, a new concept called "Floating Islands diode" (FLI-diode) is proposed: the voltage handling capability
of this new diode is assumed by the association of several PN junctions in series. This concept can be applied to any
power devices (lateral or vertical). An example of vertical power MOSFET based on this concept is presented here: this
new structure, called "FLIMOSFET", exhibits improved on-state resistance performance when compared to the conventional
VDMOSFET. For instance, for a breakdown voltage of 900 volts, the theoretical performance are strongly improved in term
of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the
silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOSFET family are determined and compared
to those of the "Superjunction" MOS Transistor family: this comparison shows the strong interest of the FLIMOSFET in
the 200 volts-1000 volts breakdown voltage range.